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RS1E200BNTB

Manufacturer:

Rohm Semiconductor

Mfr.Part #:

RS1E200BNTB

Datasheet:
Description:

MOSFETs HSOP-8 SMD/SMT N-Channel number of channels:1 25 W 30 V Continuous Drain Current (ID):20 A 59 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance2.8 mΩ
PackagingReel
Lead FreeLead Free
RoHSCompliant
Number of Terminals8
Lifecycle StatusProduction (Last Updated: 11 months ago)
Max Power Dissipation3 W
Power Dissipation25 W
Number of Channels1
Input capacitance3.1 nF
Continuous Drain Current (ID)20 A
Rds On Max3.9 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)N-Channel
Gate Charge59 nC
Drain to Source Resistance2.8 mΩ
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)30 V
Gate to Source Threshold Voltage1 V

Stock: 328

Distributors
pcbx
Unit Price$0.40694
Ext.Price$0.40694
QtyUnit PriceExt.Price
1$0.40694$0.40694
10$0.37019$3.70190
25$0.35192$8.79800
50$0.33455$16.72750
100$0.31803$31.80300
300$0.28321$84.96300
500$0.25220$126.10000
1000$0.22741$227.41000
3000$0.19670$590.10000
5000$0.17013$850.65000
10000$0.16586$1658.60000